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| MJE15032 (NPN), MJE15033 (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. Features http://onsemi.com * DC Current Gain Specified to 5.0 Amperes * * * * * * hFE = 70 (Min) @ IC = 0.5 Adc = 10 (Min) @ IC = 2.0 Adc Collector-Emitter Sustaining Voltage - VCEO(sus) = 250 Vdc (Min) - MJE15032, MJE15033 High Current Gain - Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc TO-220AB Compact Package Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Machine Model C Human Body Model 3B Pb-Free Packages are Available* 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS MARKING DIAGRAM 4 A YW MJE1503xG AKA MAXIMUM RATINGS TO-220 CASE 221A STYLE 1 II I II IIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII II IIIIII IIIIIIIIIIIIIIIIIII III I II II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIII III I II II IIIIIIIIIIIIIIIIIII III I II II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I I IIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III I II II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII II IIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII Rating Symbol VCEO VCB VEB IC IB Value 250 250 5.0 8.0 16 2.0 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous - Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD PD 50 0.40 W W/_C W W/_C _C 2.0 0.016 TJ, Tstg - 65 to + 150 1 2 3 MJE1503x = Specific Device Code x = 2 or 3 A = Assembly Location Y = Year W = Work Week G = Pb-Package ORDERING INFORMATION Device MJE15032 MJE15032G MJE15033 MJE15033G Package TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) Shipping 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Symbol RqJC RqJA Max 2.5 Unit _C/W _C/W Thermal Resistance, Junction-to-Ambient 62.5 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2005 1 June, 2005 - Rev. 3 Publication Order Number: MJE15032/D II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = hfe* ftest. ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 1) OFF CHARACTERISTICS Current Gain - Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) (IC = 2.0 Adc, VCE = 5.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 250 Vdc, IE = 0) Collector-Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) Characteristic MJE15032 (NPN), MJE15033 (PNP) http://onsemi.com VCEO(sus) Symbol VCE(sat) VBE(on) ICBO IEBO hFE fT Min 250 30 70 50 10 - - - - Max 1.0 0.5 10 10 - - - - - mAdc mAdc MHz Unit Vdc Vdc Vdc - 2 MJE15032 (NPN), MJE15033 (PNP) 1.0 0.7 0.5 0.3 0.2 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.02 ZqJC(t) = r(t) RqJC RqJC = 2.5C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 P(pk) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.07 0.05 0.03 0.02 0.01 0.01 t1 t2 SINGLE PULSE 0.05 0.1 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k Figure 1. Thermal Response 100 IC, COLLECTOR CURRENT (AMPS) 100 ms 50 ms 250 ms 10 ms 10 1.0 0.1 0.01 1.0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 2 and 4 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 2. MJE15032 & MJE15033 Safe Operating Area TA PD, POWER DISSIPATION (WATTS) TC 3.0 60 2.0 40 TC 1.0 20 TA 0 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (C) Figure 3. Power Derating http://onsemi.com 3 MJE15032 (NPN), MJE15033 (PNP) NPN - MJE15032 1000 150C 25C 100 -55C 1000 150C 100 -55C 10 25C PNP - MJE15033 h FE, DC CURRENT GAIN 10 1.0 h FE, DC CURRENT GAIN 10 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 1.0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 4. NPN - MJE15032 VCE = 5 V DC Current Gain 10 10 Figure 5. PNP - MJE15033 VCE = 5 V DC Current Gain V, VOLTAGE (VOLTS) 1.0 -55C 25C 150C V, VOLTAGE (VOLTS) 1.0 -55C 25C 150C 0.1 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 6. NPN - MJE15032 VCE = 5 V VBE(on) Curve 10 100 Figure 7. PNP - MJE15033 VCE = 5 V VBE(on) Curve V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 150C 1.0 25C 10 1.0 25C -55C -55C 0.1 0.1 150C 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 8. NPN - MJE15032 VCE(sat) IC/IB = 10 Figure 9. PNP - MJE15033 VCE(sat) IC/IB = 10 http://onsemi.com 4 MJE15032 (NPN), MJE15033 (PNP) NPN - MJE15032 100 100 150C -55C PNP - MJE15033 V, VOLTAGE (VOLTS) 1.0 25C -55C V, VOLTAGE (VOLTS) 10 150C 10 25C 1.0 0.1 0.1 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 10. NPN - MJE15032 VCE(sat) IC/IB = 20 10 V BE , BASE EMITTER VOLTAGE (VOLTS) V BE , BASE EMITTER VOLTAGE (VOLTS) 10 Figure 11. PNP - MJE15033 VCE(sat) IC/IB = 20 1.0 -55C 25C 150C 1.0 -55C 25C 150C 0.1 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 12. NPN - MJE15032 VBE(sat) IC/IB = 10 Figure 13. PNP - MJE15033 VBE(sat) IC/IB = 10 http://onsemi.com 5 MJE15032 (NPN), MJE15033 (PNP) PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AA -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MJE15032/D |
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